Requisition ID: R10170395
• Category: Engineering
• Location: Manhattan Beach, California, United States of America
• Clearance Type: Secret
• Telecommute: No- Teleworking not available for this position
• Shift: 1st Shift (United States of America)
• Travel Required: Yes, 10% of the Time
• Relocation Assistance: Relocation assistance may be available
• Positions Available: 1
At Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems that impact people's lives around the world today, and for generations to come. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon. We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work - and we have an insatiable drive to do what others think is impossible. Our employees are not only part of history, they're making history. Northrop Grumman Microelectronics Center has an opening for a Microelectronic Semiconductor Device Engineer to join our team of qualified, diverse individuals. This position will be located in Redondo Beach, CA.
The selected candidate will support the research and development of advanced microelectronics products for the Northrop Grumman Microelectronics Center. Candidate will be responsible for leading the development and maturation of novel III-V semiconductor technologies including, but not limited to, advanced GaN HEMT technology nodes. Candidate will be responsible for advancing new technologies from early research and development through production. The ideal candidate will be able to thrive in fast-paced, multidisciplinary teams. Responsibilities will include mmW transistor design and simulation, experimental device development, root cause analysis, and RF device characterization.
The selected candidate should thrive in a fast-paced work environment with high expectations, significantly diverse assignments, and team settings across all levels.  Candidate must be comfortable in a lab environment and be able to collaborate closely with process engineers, circuit designers, and test engineers.
#NGATL
Basic Qualifications:

• Bachelor's degree in a Science, Technology, Engineering or Mathematics (STEM) discipline from an accredited university and 5 years of engineering experience in an aerospace environment OR Master's degree in STEM and 3 years of engineering experience in an aerospace environment OR Ph.D. degree in STEM from an accredited institution

• Experience with semiconductor device processing

• Expertise in semiconductor device physics

• Proficiency in Design-of-Experiments methodologies

• Ability to obtain and maintain a DoD Secret clearance

• US Citizenship Required

Preferred Qualifications:

• Ph.D. degree in Electrical Engineering, Chemical Engineering, or Physics

• Experience with MMIC design and fabrication

• Direct experience with GaN transistor development

• Demonstrated track record of applying scientific principles to advance device performance

• Experience with technology maturation and transition from R&D to manufacturing

• Excellent communication, interpersonal skills, and the ability to interface with all levels of employees and management

• Ability to prioritize and perform on multiple tasks simultaneously

• Active DoD Secret Clearance #NGMCFab

Salary Range: $102,400 - $153,600
The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions.
Employees may be eligible for a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business.
The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates.Northrop Grumman is committed to hiring and retaining a diverse workforce. We are proud to be an Equal Opportunity/Affirmative Action Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO/AA and Pay Transparency statement, please visit. U.S. Citizenship is required for all positions with a government clearance and certain other restricted positions.PDN-9d08186e-41ca-4874-b065-7f2c1d30c100